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10 April 1996 Advanced epitaxial growth and device processing techniques for ultrahigh-speed (>40 GHz) directly modulated semiconductor lasers
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Abstract
Optimized molecular-beam epitaxial growth of pseudomorphic MQWs, the application of abrupt and spatially-localized carbon doping, and the development of short-cavity coplanar ridge-waveguide structures with high-quality chemically-assisted ion-beam etched facets have been combined to fabricate GaAs-based MQW lasers which have achieved damping-limited direct modulation bandwidths exceeding 40 GHz. More detailed measurements indicate intrinsic modulation bandwidths exceeding 60 GHz for devices with p-doped active regions. The reduced linewidth enhancement factor, (alpha) , observed in these lasers also indicates their suitability for low-chirp high-speed direct modulation. The laser design has been further incorporated into a complete technological process for the monolithic integration of GaAs MQW lasers and HEMT-based laser-driver circuits capable of operation in data rates up to 20 Gb/s. Using the impurity-free interdiffusion process, large shifts in the lasing wavelength have been achieved with no strain relaxation and while maintaining the high-speed modulation properties of the pseudo-morphic InGaAs/GaAs MQW lasers, demonstrating the feasibility of fabricating high-speed multi-wavelength laser arrays.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John D. Ralston, Eric C. Larkins, K. Eisele, S. Weisser, Susann Buerkner, A. Schoenfelder, Juergen Daleiden, Konrad Czotscher, Ignacio Esquivias, Joachim Fleissner, R. E. Sah, Martin Maier, Willy Benz, and Josef Rosenzweig "Advanced epitaxial growth and device processing techniques for ultrahigh-speed (>40 GHz) directly modulated semiconductor lasers", Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); https://doi.org/10.1117/12.237689
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