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10 April 1996 Dual-wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells
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The longer-wavelength quantum well in an AlGaAs/GaAs asymmetric dual quantum well laser structure was selectively removed by localized intermixing. High Si-doping on each side of the longer-wavelength well caused intermixing during an anneal under a SiNx cap, while leaving the other nearby well intact. During an anneal under an exposed GaAs surface layer, both quantum wells remained intact. By patterning the surface with alternating SiNx and exposed GaAs, the longer-wavelength quantum well was selectively intermixed under the SiNx. Integrated broad area lasers were fabricated with threshold current density and external quantum efficiency of 260 A/cm2 and 30%/facet at a wavelength of 751 nm in capped regions and 195 A/cm2, 32%/facet at 824 nm in the uncapped regions. This technique can be used to fabricate close spacing multi-wavelength laser arrays.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Decai Sun, K. J. Beernink, Robert L. Thornton, and David W. Treat "Dual-wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells", Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996);

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