1 April 1996 Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers
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The transport of carriers along the confinement region, the carrier capture into, and the carrier escape out of the quantum wells (QWs) are limiting processes affecting the high-frequency properties of QW lasers. The influence of these processes on the laser performance depends mainly on the ratio of the effective carrier transport/capture time and the effective escape time. We present experimental results about the escape times for GaAs/AlGaAs and InGaAs/GaAs high-speed QW lasers with varied geometrical dimensions (cavity width and length), number of QWs, In-concentrations, and p-doping levels in the active region, as extracted from electrical impedance measurements in the sub-threshold regime. In addition to the expected increase of the escape time with increasing QW barrier height, we observe an important increase in the escape time for lasers with p-doping. The escape time dependences on the carrier concentration and on the temperature are determined and discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ignacio Esquivias, Ignacio Esquivias, Beatriz Romero Herrero, Beatriz Romero Herrero, S. Weisser, S. Weisser, Konrad Czotscher, Konrad Czotscher, John D. Ralston, John D. Ralston, Eric C. Larkins, Eric C. Larkins, Julia Arias, Julia Arias, A. Schoenfelder, A. Schoenfelder, Michael Mikulla, Michael Mikulla, Joachim Fleissner, Joachim Fleissner, Josef Rosenzweig, Josef Rosenzweig, } "Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers", Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236950; https://doi.org/10.1117/12.236950

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