1 April 1996 Low-temperature modulation characteristics of a quantum well laser
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Abstract
We have systematically studied modulation characteristics of an InGaAsP multiple quantum well laser diode in the temperature range between 300 K to 10 K. We show that the modulation bandwidth increases dramatically at lower temperature which can be attributed to dramatic increase of differential gain. Modulation characteristics at temperatures below 100 K show an additional low frequency roll off that cannot be accounted for by device parasitics. We discuss the origin of this effect in the context of the device carrier transport effects.
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Rang-Chen Yu, Rang-Chen Yu, Radhakrishnan Nagarajan, Radhakrishnan Nagarajan, John Edward Bowers, John Edward Bowers, } "Low-temperature modulation characteristics of a quantum well laser", Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236949; https://doi.org/10.1117/12.236949
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