1 April 1996 Monolithically integrated high-speed high-power diffraction-limited semiconductor sources for space telecommunications
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Abstract
High-power semiconductor sources capable of high-speed modulation are very desirable for free-space digital telecommunications such as satellite optical communication links. Moreover, a diffraction limited beam quality is necessary for most applications. We describe advances in the development of high-power, diffraction-limited semiconductor lasers based on the master oscillator/power amplifier (MOPA) architecture and capable of high-speed modulation. Devices containing monolithically integrated electro-absorption or phase modulators demonstrate 5 GHz small signal modulation bandwidth at 1 W output power.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Marc Verdiell, Jean-Marc Verdiell, Robert J. Lang, Robert J. Lang, Kenneth M. Dzurko, Kenneth M. Dzurko, Stephen O'Brien, Stephen O'Brien, Jules S. Osinski, Jules S. Osinski, David F. Welch, David F. Welch, Donald R. Scifres, Donald R. Scifres, } "Monolithically integrated high-speed high-power diffraction-limited semiconductor sources for space telecommunications", Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236938; https://doi.org/10.1117/12.236938
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