12 April 1996 Fabrication and performance characteristics of high-speed ion-implanted Si metal-semiconductor-metal photodetectors
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Abstract
We have fabricated high speed Si metal semiconductor metal photodetector using 19F+ ion implantation in low doped Si. Bandwidths in excess of 6 GHz have been obtained representing more than an order of magnitude improvement over unimplanted counterparts. Measurements using short optical pulses show that the increase in bandwidth is primarily due to shorter carrier lifetime in implanted devices. In the absence of implantation, the response under short optical pulse excitation has a long decay with a time constant of approximately 0.35 ns. An optical fiber transmission experiment using a GaAs ((lambda) approximately 0.85 micrometers ) laser source and the implanted Si photodetector was carried out. Error-free transmission (BER < 10-11) with good receiver sensitivity was obtained at 2 Gb/s. These results demonstrate implanted Si can be used as a detector for short wavelength fiber optic communication systems for speeds up to a few Gb/s. Monolithic integration of this detector technology with conventional Si processing offer the potential for low cost receiver designs.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Niloy K. Dutta, Doyle T. Nichols, D. C. Jacobson, Gabriela Livescu, "Fabrication and performance characteristics of high-speed ion-implanted Si metal-semiconductor-metal photodetectors", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237699; https://doi.org/10.1117/12.237699
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