12 April 1996 Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment
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Proceedings Volume 2685, Photodetectors: Materials and Devices; (1996); doi: 10.1117/12.237703
Event: Photonics West '96, 1996, San Jose, CA, United States
Abstract
We will present high quality In0.53Ga0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.
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Wei Gao, Paul Raymond Berger, Robert G. Hunsperger, Jagadeesh Pamulapati, Richard T. Lareau, "Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237703; https://doi.org/10.1117/12.237703
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KEYWORDS
Liquid phase epitaxy

Chemical elements

Gadolinium

Indium

Erbium

Indium gallium arsenide

Ytterbium

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