12 April 1996 Modeling high-speed MSM photodetectors
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Abstract
A feature of metal-semiconductor-metal (MSM) photodetectors is their low capacitance. In this paper, a new design formula is presented for the capacitance per unit area of an MSM photodetector. A comprehensive circuit model is also described which incorporates the optoelectronic conversion within a larger model which in turn accommodates the transmission line effects of the interdigitated structure. These models can be used to optimize the design of a receiver employing an MSM photodetector.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurence W. Cahill, "Modeling high-speed MSM photodetectors", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237701; https://doi.org/10.1117/12.237701
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