12 April 1996 Optical absorption and photoresponse in fully quaternary p-type quantum well detectors
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Abstract
Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga0.79In0.21As0.59P0.41 wells and Ga0.62In0.38As0.22P0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 micrometers up to 10 micrometers . To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 X 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Hoff, Christopher Louis Jelen, Steven Slivken, Gail J. Brown, Manijeh Razeghi, "Optical absorption and photoresponse in fully quaternary p-type quantum well detectors", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237713; https://doi.org/10.1117/12.237713
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