Peculiarities of electrically active states generation in HgCdTe

Volodymyr G. Savitsky; Peter E. Storchun

doi:10.1117/12.237711

12 April 1996 Peculiarities of electrically active states generation in HgCdTe

Volodymyr G. Savitsky, Peter E. Storchun

Proceedings Volume 2685, Photodetectors: Materials and Devices; (1996) https://doi.org/10.1117/12.237711
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

An investigation of native defect formation in n-HgCdTe was performed under conditions that reduce the possibility of mercury atom loss to define the contribution from complex defects to electrically active state formation. The short-term heat treatments were produced in vacuum by passing the current directly through a sample. The temperature measurement was carried out by registering the Planck radiation from the sample surface.

Citation Download Citation

Volodymyr G. Savitsky and Peter E. Storchun "Peculiarities of electrically active states generation in HgCdTe", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); https://doi.org/10.1117/12.237711

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