12 April 1996 Peculiarities of electrically active states generation in HgCdTe
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Abstract
An investigation of native defect formation in n-HgCdTe was performed under conditions that reduce the possibility of mercury atom loss to define the contribution from complex defects to electrically active state formation. The short-term heat treatments were produced in vacuum by passing the current directly through a sample. The temperature measurement was carried out by registering the Planck radiation from the sample surface.
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Volodymyr G. Savitsky, Peter E. Storchun, "Peculiarities of electrically active states generation in HgCdTe", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237711; https://doi.org/10.1117/12.237711
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