12 April 1996 Silicon-based resonant cavity detectors for long-wave infrared imaging
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A vertical resonant cavity detector for thermal imaging in the 8 - 9 micrometers wavelength range has been demonstrated, using a p-SiGe/Si quantum well structure on a silicon-on-insulator substrate with a 2 micrometers thick buried oxide layer. The photoresponse spectrum shows peaks at wavelengths corresponding to standing waves in the cavity, confirming resonant detection. The measured responsivity at the main cavity resonance near 8.7 micrometers , with 2 V bias, is 10 mA/W. This is several times larger than the responsivity typically observed, at the same wavelength and bias, for comparable non-resonant detectors grown on attenuating p+-Si substrates. The resonant device uses the Si/SiO2 interface as the buried mirror. The reflectance of this interface is particularly high between 7 - 9 micrometers , due of the dispersion of the refractive index near the oxide phonon absorption band.
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David J. Robbins, David J. Robbins, Roger Timothy Carline, Roger Timothy Carline, Mark Brian Stanaway, Mark Brian Stanaway, Weng Y. Leong, Weng Y. Leong, "Silicon-based resonant cavity detectors for long-wave infrared imaging", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237705; https://doi.org/10.1117/12.237705

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