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12 April 1996 Simple computer analysis of InP and GaAs avalanche photodetectors using different ionization rate data
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Abstract
Steady state computer analysis in the dark followed by time domain analysis in presence of optical radiation has been carried out to study the effect of ionization rates of charge carriers on the quantum efficiency and avalanche noise factors of p+nn+ and p+pnn+ structures of InP and GaAs avalanche photodetectors (APD). The simulation results show that the quantum efficiency of a GaAs APD is higher (80% at (lambda) equals 0.79 micrometers ) than that of an InP APD (64% at (lambda) equals 0.89 micrometers ) for both the structures. The results also suggest that the noise performance characteristics of both InP and GaAs APD's are sensitive functions of ionization rate data but the quantum efficiency is almost independent of ionization rates.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Banerjee "Simple computer analysis of InP and GaAs avalanche photodetectors using different ionization rate data", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); https://doi.org/10.1117/12.237709
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