UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond

Peter B. Kosel; D. Wu; A. M. Dalton; Amir Amin Hanjani; S. F. Carr; P. R. Emmert; R. L. C. Wu

doi:10.1117/12.237698

12 April 1996 UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond

Peter B. Kosel, D. Wu, A. M. Dalton, Amir Amin Hanjani, S. F. Carr, P. R. Emmert, R. L. C. Wu

Proceedings Volume 2685, Photodetectors: Materials and Devices; (1996) https://doi.org/10.1117/12.237698
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The semiconductors gallium arsenide and polycrystalline diamond can both be obtained in a high resistivity form suitable for the fabrication of photosensors and detector arrays for the ultraviolet region of the electromagnetic spectrum. These materials have different energy bandgaps and chemical properties which make them complementary partners in providing photodetectors for coverage of the spectral range from near 100 nm in the vacuum ultraviolet to the near infrared at 870 nm. The readily available forms of these two semiconductors are different. GaAs is available in the form of single crystal wafers with uniform properties while polycrystalline diamond in a tight packing of crystallites with varying orientations providing only an average uniformity on the micron scale determined by the size of the crystallites. The GaAs MSM detectors were studied for use in monolithic GaAs-based charge-coupled device scanners for the ultraviolet spectroscopy. The polycrystalline diamond MSM devices are being investigated for hybrid scanners on silicon for the vacuum ultraviolet.

Citation Download Citation

Peter B. Kosel, D. Wu, A. M. Dalton, Amir Amin Hanjani, S. F. Carr, P. R. Emmert, and R. L. C. Wu "UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); https://doi.org/10.1117/12.237698

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