12 April 1996 UV photodetectors based on AlxGa1-xN grown by MOCVD
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Abstract
Metalorganic chemical vapor deposition was used to deposit AlxGa1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. AlxGa1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.
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Adam W. Saxler, Adam W. Saxler, Danielle Walker, Danielle Walker, Xiaolong Zhang, Xiaolong Zhang, Patrick Kung, Patrick Kung, Jianren Xu, Jianren Xu, Manijeh Razeghi, Manijeh Razeghi, } "UV photodetectors based on AlxGa1-xN grown by MOCVD", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237697; https://doi.org/10.1117/12.237697
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