12 April 1996 UV photodetectors based on AlxGa1-xN grown by MOCVD
Author Affiliations +
Metalorganic chemical vapor deposition was used to deposit AlxGa1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. AlxGa1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam W. Saxler, Adam W. Saxler, Danielle Walker, Danielle Walker, Xiaolong Zhang, Xiaolong Zhang, Patrick Kung, Patrick Kung, Jianren Xu, Jianren Xu, Manijeh Razeghi, Manijeh Razeghi, } "UV photodetectors based on AlxGa1-xN grown by MOCVD", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237697; https://doi.org/10.1117/12.237697

Back to Top