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25 March 1996 Magnetron plasma etching of SiC for microstructures
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Fast means of etching SiC are required for the fabrication of SiC microstructures. Single- crystal 6H-SiC was etched at rates as high as 640 nm/min in a magnetron plasma reactor using a mixture of CHF3 and O2. Extremely smooth surfaces were obtained, even for etches of several micrometer depth. At a lower rf power, 50 W instead of 250 W, a 12:1 selectivity with respect to aluminum was demonstrated, with a SiC etch rate of 170 nm/min. These preliminary results show that this approach is potentially a very useful tool for SiC microfabrication.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glenn Beheim and Carl Salupo "Magnetron plasma etching of SiC for microstructures", Proc. SPIE 2686, Integrated Optics and Microstructures III, (25 March 1996);

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