Magnetron plasma etching of SiC for microstructures

Glenn Beheim; Carl Salupo

doi:10.1117/12.236126

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25 March 1996 Magnetron plasma etching of SiC for microstructures

Glenn Beheim; Carl Salupo

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Proceedings Volume 2686, Integrated Optics and Microstructures III; (1996) https://doi.org/10.1117/12.236126
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Fast means of etching SiC are required for the fabrication of SiC microstructures. Single- crystal 6H-SiC was etched at rates as high as 640 nm/min in a magnetron plasma reactor using a mixture of CHF₃ and O₂. Extremely smooth surfaces were obtained, even for etches of several micrometer depth. At a lower rf power, 50 W instead of 250 W, a 12:1 selectivity with respect to aluminum was demonstrated, with a SiC etch rate of 170 nm/min. These preliminary results show that this approach is potentially a very useful tool for SiC microfabrication.

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Glenn Beheim and Carl Salupo "Magnetron plasma etching of SiC for microstructures", Proc. SPIE 2686, Integrated Optics and Microstructures III, (25 March 1996); https://doi.org/10.1117/12.236126

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