25 March 1996 Optical constants of thin-film gallium sulfide layers
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Abstract
Gallium sulfide (GaS) deposited by chemical vapor deposition (CVD) is known to passivate GaAs surfaces. In this paper we examine the thin film optical properties of GaS as they relate to the fabrication of optical waveguides. Spectroscopic ellipsometry was used to determine the index of refraction of GaS films deposited on various substrates. Results indicate that GaS has a high index of refraction suitable for waveguide structures. A gallium sulfide waveguide could provide both the optical interconnect and the passivating layer of GaAs integrated circuits. Progress toward fabricating GaS waveguides is also discussed.
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Phillip Jenkins, Phillip Jenkins, Meg L. Tuma, Meg L. Tuma, David H. Naghski, David H. Naghski, Andrew MacInnes, Andrew MacInnes, } "Optical constants of thin-film gallium sulfide layers", Proc. SPIE 2686, Integrated Optics and Microstructures III, (25 March 1996); doi: 10.1117/12.236130; https://doi.org/10.1117/12.236130
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