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29 July 1981 Current Status Of (GaAI)As Diode Lasers
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Proceedings Volume 0269, Integrated Optics I; (1981) https://doi.org/10.1117/12.959944
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
The general operating principles of CW double heterostructure diode lasers are discussed to indicate the sources of gain, waveguidance and resonance. Gain-guided lasers are noted to be astigmatic and the "kink" phenomenon, which troubles those devices with wider stripes, is explained. The very narrow stripe gain-guided laser is shown to suffer from severe astigmatism and an undersirable far field pattern even though it is free of kinks. Three types of real refractive index waveguide lasers are considered in turn: the channelled-substrate-planar (CSP), the strip buried (SB), and lasers with laterally tapered layers. Within the last group are the plano-convex waveguide (PCW) laser, the non-planar large-optical-cavity (NP-LOC) device, and otherwise conventional lasers with tapered active regions. The operating principle, characteristics and shortcomings of each are discussed and the general classes of gain-guided and real refractive index waveguide lasers are compared. An optimal design for a waveguide laser is proposed.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Streifer, R. D. Burnham, and D. R. Scifres "Current Status Of (GaAI)As Diode Lasers", Proc. SPIE 0269, Integrated Optics I, (29 July 1981); https://doi.org/10.1117/12.959944
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