Paper
1 May 1996 Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure
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Abstract
GaN/In0.05Ga0.95N/Al0.15Ga0.85N double heterostructures doped with Zn and Si, used in Nichia LEDs, are investigated. Electrical, electroluminescent and photoluminescent properties are presented and discussed. Blue photoluminescence (PL) is analyzed to obtain optical transition parameters (phonon coupling strength and zero-phonon line position) involved in formation of the impurity-related emission band. With a minor modification of parameters for Zn centers in GaN, a satisfactory fit is achieved for PL spectra.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Petr Georgievich Eliseev, Vladimir A. Smagley, Piotr Perlin, Philippe Sartori, and Marek Osinski "Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238944
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KEYWORDS
Phonons

Gallium nitride

Zinc

Diodes

Indium gallium nitride

Luminescence

Temperature metrology

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