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1 May 1996 Critical issues in laser diode calculations
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We have examined the critical factors in calculations of optical gain and spontaneous recombination in GaAs, GaInP, and GaN semiconductor quantum well systems, in particular, the behavior of the transparency current and the effects of Coulomb enhancement. We have also compared the optical confinement factors, and the relative importance of spectral broadening by de-phasing of the polarization due to carrier-carrier interactions and by unintentional monolayer well width variations. These effects are quantified for the three material systems. We also present the results of full simulations of the potential distribution through GaInP laser structures and compare these with the common flat-band approach.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Blood, Paul C. T. Rees, Craig Cooper, and Peter M. Smowton "Critical issues in laser diode calculations", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996);

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