1 May 1996 Electrical characterization of p-type Zn(Se,Te):N semiconductor layers
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Abstract
We have grown p-type ZnSe1-xTex:N (x equals 0.08 - 1.0) epilayers by molecular beam epitaxy on GaAs substrates, and characterized their electrical behavior. The Te fraction x was determined by energy-dispersive x-ray spectroscopy and by high-resolution x-ray diffraction. The free-hole concentrations and mobilities were determined by Hall-effect measurements, and the contact resistances of evaporated PdAu metal to the epilayers were measured using standard transmission-line techniques. The contact resistance decreases sharply with increasing Te content, falling from 0.6 (Omega) cm2 for a film with 8% Te to 3.5 multiplied by 10-7 (Omega) cm2 for a pure ZnTe film. Under the growth and doping conditions used, the hole mobility shows a minimum of about 1 cm2/Vs at about 25% Te. It is expected that by optimizing these single-layer properties, the building blocks of an improved electrical contact to ZnSe can be obtained.
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Thomas Marshall, Thomas Marshall, Michael D. Pashley, Michael D. Pashley, Albert Sicignano, Albert Sicignano, L. Zhao, L. Zhao, } "Electrical characterization of p-type Zn(Se,Te):N semiconductor layers", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238979; https://doi.org/10.1117/12.238979
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