1 May 1996 Excitons, biexcitons, and stimulated emission in wide gap II-VI quantum wells
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Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996); doi: 10.1117/12.238957
Event: Photonics West '96, 1996, San Jose, CA, United States
Abstract
This paper studies excitons and bi-excitons in ternary (Zn,Cd)Se/ZnSe quantum wells, widely used as active region in blue-green laser diodes. Localization on alloy disorder characteristically influences the electronic structure of these excitations and their dynamical behavior. The low-temperature lasing is controlled by bi-excitons. Gain as large as 2 (DOT) 104 cm-1 and optical threshold densities as low as 2 kW cm-2 are observed. Due to their localization-enhanced binding energy, bi-exciton signatures are present up to 150 K.
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Fritz Henneberger, Joachim Puls, T. Hauepl, Frank Kreller, Martin Lowisch, H. Nickolaus, Alex Schuelzgen, Hans-Juergen Wuensche, J. Griesche, Nir J. Hoffman, Michael Rabe, "Excitons, biexcitons, and stimulated emission in wide gap II-VI quantum wells", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238957; http://dx.doi.org/10.1117/12.238957
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KEYWORDS
Excitons

Quantum wells

Picosecond phenomena

Absorption

Cadmium

Temperature metrology

Geometrical optics

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