1 May 1996 Excitons, biexcitons, and stimulated emission in wide gap II-VI quantum wells
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Abstract
This paper studies excitons and bi-excitons in ternary (Zn,Cd)Se/ZnSe quantum wells, widely used as active region in blue-green laser diodes. Localization on alloy disorder characteristically influences the electronic structure of these excitations and their dynamical behavior. The low-temperature lasing is controlled by bi-excitons. Gain as large as 2 (DOT) 104 cm-1 and optical threshold densities as low as 2 kW cm-2 are observed. Due to their localization-enhanced binding energy, bi-exciton signatures are present up to 150 K.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fritz Henneberger, Fritz Henneberger, Joachim Puls, Joachim Puls, T. Hauepl, T. Hauepl, Frank Kreller, Frank Kreller, Martin Lowisch, Martin Lowisch, H. Nickolaus, H. Nickolaus, Alex Schuelzgen, Alex Schuelzgen, Hans-Juergen Wuensche, Hans-Juergen Wuensche, J. Griesche, J. Griesche, Nir J. Hoffman, Nir J. Hoffman, Michael Rabe, Michael Rabe, "Excitons, biexcitons, and stimulated emission in wide gap II-VI quantum wells", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238957; https://doi.org/10.1117/12.238957
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