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1 May 1996 Growth of pseudomorphic ZnSSe on Te-terminated GaAs
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In order to grow ZnSe based optoelectronical devices on GaAs, the III/V-II/VI interface has to be controlled very precisely. To obtain lattice matching sulfur is added to reduce the lattice constant to the value of GaAs. This element, much more reactive than selenium, aggravates the growth of a perfect interface even more. For ZnSe grown on tellurium terminated GaAs, an improved layer quality and a much higher critical thickness was reported. It is the scope of this paper to explore the advantages of a Te terminated initial surface for the growth of ZnSxSe1-x. For this purpose we have investigated the Te and the competing Se and sulfur terminated surfaces with x-ray photo-electron spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). For the use of Te/GaAs as a protection against the reaction of S and Se with GaAs its stability in a Se or sulfur flux was investigated. To use Te/GaAs as a starting surface for an optoelectronic device it is necessary to clarify what happens to the Te after the growth start. From temperature dependent growth experiments, which were interrupted to measure XPS, we could not detect tellurium incorporation. This was confirmed by photoluminescence measurement (PL). With high resolution x-ray diffraction (HRXRD) we detected pseudomorphic growth up to a sulfur content of 19% and a thickness of 240 nm. Both methods show exceptional good layer quality, which is possible due to the tellurium termination of GaAs prior to ZnSe growth.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang Spahn, H. Ress, C. Fischer, R. Ebel, Wolfgang Faschinger, M. Ehinger, and Gottfried Landwehr "Growth of pseudomorphic ZnSSe on Te-terminated GaAs", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996);

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