1 May 1996 Highly nondegenerate four-wave mixing in semiconductor laser amplifiers
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Abstract
We present theory and experiments of four-wave mixing in bulk-semiconductor amplifiers. The theory includes bimolecular and auger recombinations. We show experimentally conversion efficiency larger than unit up to 2 THz frequency shift. We measure a signal-to- background ratio compatible with that required by practical applications as frequency converters. The high efficiency of the four-wave mixing process permits the investigation of the carrier dynamics down to an equivalent time resolution of the order of few tens of femtoseconds.
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Antonio Mecozzi, A. D'Ottavi, F. Martelli, S. Scotti, Paolo Spano, R. Dall'Ara, J. Eckner, George Guekos, "Highly nondegenerate four-wave mixing in semiconductor laser amplifiers", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238964; https://doi.org/10.1117/12.238964
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