1 May 1996 Highly nondegenerate four-wave mixing in semiconductor laser amplifiers
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We present theory and experiments of four-wave mixing in bulk-semiconductor amplifiers. The theory includes bimolecular and auger recombinations. We show experimentally conversion efficiency larger than unit up to 2 THz frequency shift. We measure a signal-to- background ratio compatible with that required by practical applications as frequency converters. The high efficiency of the four-wave mixing process permits the investigation of the carrier dynamics down to an equivalent time resolution of the order of few tens of femtoseconds.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antonio Mecozzi, A. D'Ottavi, F. Martelli, S. Scotti, Paolo Spano, R. Dall'Ara, J. Eckner, George Guekos, "Highly nondegenerate four-wave mixing in semiconductor laser amplifiers", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238964; https://doi.org/10.1117/12.238964

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