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1 May 1996 Modeling and characterization of high-frequency high-power GaN/SiC HBTs operating at high temperature
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Abstract
Device modeling is used in the design and characterization of GaN/SiC heterostructure bipolar transistors (HBTs), operating at high power, high frequency, and high temperature. The differential current gain ((beta) ) simulated to be constant for an emitter current over several order of magnitudes and decreased significantly with increasing temperature. The current gain as a function of temperature was obtained from a maximum of 300,000 at room temperature to a value of about 200 at 300 degrees Celsius. Simulated results show maximum cutoff frequency of 8 MHz. The high temperature device modeling approach taken in this study is shown to be essential in the design and optimization of GaN/SiC HBTs for high power high frequency high temperature operation and compares well with the experimental data.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hamid Z. Fardi and Jacques I. Pankove "Modeling and characterization of high-frequency high-power GaN/SiC HBTs operating at high temperature", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238942
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