1 May 1996 Observation of spectral hole sidebands in the gain region of an inverted semiconductor
Author Affiliations +
Abstract
We have performed ultrafast three-pulse experiments in order to investigate the relaxation of charge carriers from a non-equilibrium distribution in inverted GaAs multiple quantum wells. The first pulse, used to create optical gain, was followed by a conventional pump-probe study. The pump-induced spectral hole inside the optical gain was accompanied by sidebands which occurred about 39 meV above the original spectral hole. These sidebands can be explained in terms of LO-phonon scattering of the charge carriers into the vacancies of the spectral hole.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georg Mohs, Rolf H. Binder, Brian Fluegel, Harald W. Giessen, Nasser Peyghambarian, "Observation of spectral hole sidebands in the gain region of an inverted semiconductor", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238962; https://doi.org/10.1117/12.238962
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Cooling Of Hot Electron-Hole-Plasmas In GaAs Quantum Wells
Proceedings of SPIE (August 22 1988)
Electron-Hole Interaction In GaAs
Proceedings of SPIE (August 22 1988)
Femtosecond dynamics of hot carriers in GaAs
Proceedings of SPIE (October 21 1992)
Femtosecond Relaxation Processes In Semiconductors
Proceedings of SPIE (August 22 1988)

Back to Top