1 May 1996 Optical gain in ZnCdSe-ZnSe quantum well structures
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Abstract
We have measured the gain spectrum of an optically pumped 40 angstrom ZnCdSe-ZnSe multiple quantum well. Our calculation, which includes many body effects such as Coulomb enhancement and spectral broadening due to carrier scattering, gives excellent agreement with the experimental gain measurements. We then show the importance of the inclusion of the Coulomb enhancement for the calculation of optical gain when predicting laser threshold currents. This is emphasized by using our gain calculation as a basis to theoretically optimize a simple ZnCdSe-ZnSe quantum well laser structure incorporating the leakage current over the p-type cladding.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul C. T. Rees, Paul C. T. Rees, Jon. F. Heffernan, Jon. F. Heffernan, Fred P. Logue, Fred P. Logue, John F. Donegan, John F. Donegan, Christopher Jordan, Christopher Jordan, John Hegarty, John Hegarty, Futoshi Hiei, Futoshi Hiei, Akira Ishibashi, Akira Ishibashi, } "Optical gain in ZnCdSe-ZnSe quantum well structures", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238946; https://doi.org/10.1117/12.238946
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