1 May 1996 Optical studies of epitaxial GaN-based materials
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Abstract
A variety of spectroscopic techniques has been used to study the optical properties of epitaxial GaN based materials grown by metalorganic chemical vapor deposition and molecular beam epitaxy. The emphasis was on the issues vital to device applications such as stimulated emission and laser action, as well as carrier relaxation dynamics. Sharp exciton structures were observed by optical absorption measurements above 300 K, providing direct evidence of the formation of excitons in GaN at temperatures higher than room temperature. Using a picosecond streak camera, the time decay of free and bound exciton emissions was studied. By optical pumping, stimulated emission and lasing were investigated over a wide temperature range up to 420 K. In addition, the optical nonlinearity of GaN was studied using wave mixing techniques.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Joo Song, Jin-Joo Song, W. Shan, W. Shan, Theodore J. Schmidt, Theodore J. Schmidt, X. H. Yang, X. H. Yang, Arthur J. Fischer, Arthur J. Fischer, S. J. Hwang, S. J. Hwang, Bahman Taheri, Bahman Taheri, Barbara L. Goldenberg, Barbara L. Goldenberg, Robert D. Horning, Robert D. Horning, Arnel A. Salvador, Arnel A. Salvador, W. Kim, W. Kim, O. Aktas, O. Aktas, Andrei Botchkarev, Andrei Botchkarev, Hadis Morkoc, Hadis Morkoc, } "Optical studies of epitaxial GaN-based materials", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238943; https://doi.org/10.1117/12.238943
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