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1 May 1996 Optimization of active-layer and cavity design parameters for low-threshold GaN/AlGaN double-heterostructure diode lasers
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Abstract
Calculations are presented aimed at optimizing the design of GaN/AlGaN double- heterostructure diode lasers emitting in the near-UV spectral region. Material parameters of GaN active medium are reviewed and specified for modeling of both edge- and surface- emitting laser devices. Comparison with published experimental results indicates that nonradiative recombination in the active region (most likely occurring at heterojunction interfaces) limits the carrier lifetime to approximately 1 ns. Theoretical minimum threshold current density is shown to depend weakly on the assumed band parameters.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marek Osinski and Petr Georgievich Eliseev "Optimization of active-layer and cavity design parameters for low-threshold GaN/AlGaN double-heterostructure diode lasers", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238945
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