1 May 1996 Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors
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Abstract
We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a multitude of one-electron-hole pair and two-electron-hole pair transitions, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.
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Harald W. Giessen, Harald W. Giessen, Ulrike Woggon, Ulrike Woggon, Brian Fluegel, Brian Fluegel, Georg Mohs, Georg Mohs, Yuan Zheng Hu, Yuan Zheng Hu, Stephan W. Koch, Stephan W. Koch, Nasser Peyghambarian, Nasser Peyghambarian, } "Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238959; https://doi.org/10.1117/12.238959
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