1 May 1996 Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures
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Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996); doi: 10.1117/12.238981
Event: Photonics West '96, 1996, San Jose, CA, United States
Abstract
This paper reviews the use of the contactless electromodulation spectroscopy methods of photoreflectance and contactless electroreflectance for the nondestructive, room temperature investigation of wafer-scale single or multiquantum well laser structures including 0.98 micrometer InGaAs/GaAs/GaAlAs (graded index separate confinement heterostructure), 1.3 micrometer InGaAsP/InP, 0.98 micrometer InGaAs/GaAs/InGaP and 0.65 micrometer InGaP/AlInP/AlGaInP planar as well as InGaAs/GaAs/GaAlAs and GaAs/GaAlAs vertical cavity emitting samples.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred H. Pollak, Wojciech Krystek, M. Leibovitch, L. Malikova, Mark S. Hybertsen, R. Lum, J. M. Vandenberg, C. Lewis Reynolds, "Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238981; https://doi.org/10.1117/12.238981
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KEYWORDS
Quantum wells

Indium gallium arsenide

Signal detection

Solids

Gallium arsenide

Vertical cavity surface emitting lasers

Absorption

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