1 May 1996 Three-terminal laser structures for high-speed modulation using variable carrier heating
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Concept, basic physics and modeling results of a novel modulation technique, associated with a variable heating of the electron-hole plasma in the active region of a lasing device, are reviewed with respect to the ultimately high-speed performance of semiconductor lasers. It is shown, that independent control of the plasma concentration and temperature provides a way for generating the picosecond gain-switched optical pulses and multi-Gbit/s modulation with, optionally, no parasitic frequency chirp. To practically realize this method, three-terminal laser structures are suggested, in which two bias voltages are intended to drive the pumping rate and the energy, yielded in the active region plasma as a result of injecting a single electron.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valery I. Tolstikhin, Magnus Willander, "Three-terminal laser structures for high-speed modulation using variable carrier heating", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238988; https://doi.org/10.1117/12.238988

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