19 April 1996 Excited states in InAs self-assembled quantum dots
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Proceedings Volume 2694, Quantum Well and Superlattice Physics VI; (1996); doi: 10.1117/12.238400
Event: Photonics West '96, 1996, San Jose, CA, United States
Abstract
We use capacitance and photoluminescence spectroscopy to study the energy splitting of electron and hole states in InAs self assembled quantum dots embedded in GaAs bulk material. In our photoluminescence spectra, measured with high excitation, we observe five peaks below the wetting layer transition which we attribute to electron hole recombination from quantum dot levels of the same quantum number. Resonant excited photoluminescence experiments show clearly the existence of phonon enhanced carrier relaxation if the energy splitting between two different quantum dot levels matches a multiple of the available phonon energies. Therefore a maximum in the intensity of the resonantly excited photoluminescence does not necessarily occur when most of the dots are pumped resonantly into an excited state, the main criterion, however, is that the energy distance between the pumped levels and the levels below matches a multiple of the available phonon energies.
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Klaus Schmidt, Gilbert Medeiros-Ribeiro, M. Oestreich, Pierre M. Petroff, "Excited states in InAs self-assembled quantum dots", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238400; https://doi.org/10.1117/12.238400
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KEYWORDS
Indium arsenide

Phonons

Gallium arsenide

Quantum dots

Capacitance

Luminescence

Spectroscopy

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