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19 April 1996 GaInSb/InAs superlattice-based infrared lasers
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Abstract
Mid-wave infrared lasers have been fabricated employing InAs/A1Sb superlattice cladding layers and multi-quantum well active regions consisting of Ga75In025Sb1InAs broken-gap superlattice wells and Ga75In025As023Sb,,77 barriers. Diodes demonstrated to date include lasers with emission wavelengths of 3.18j.tm at 255K, 3.40im at 195K, and 4.32p.m at 110K. Keywords: infrared, laser, diode, superlattice, multi-quantum well
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard H. Miles, Tom C. Hasenberg, Alan R. Kost, and L. West "GaInSb/InAs superlattice-based infrared lasers", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238382; https://doi.org/10.1117/12.238382
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