19 April 1996 Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes
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Abstract
Through the use of a vertically-integrated resonant tunneling diode heterostructure, we have examined the impact of lattice-mismatch on the electrical properties of the AlAs/In0.53Ga0.47As/InAs resonant tunneling diode (RTD). For strained-layers below the critical thickness, the current-voltage characteristics of the RTD track the bandgap change. In contrast, for strained layers greater than the critical thickness, the current-voltage characteristics are significantly degraded in the case of three-dimensional relaxation, but retain their characteristics in the case of two-dimensional relaxation.
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Theodore S. Moise, Theodore S. Moise, Yung Chung Kao, Yung Chung Kao, Francis G. Celii, Francis G. Celii, "Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238393; https://doi.org/10.1117/12.238393
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