19 April 1996 Influence of double-barrier quantum well asymmetry on RTD switching time
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The influence of double-barrier quantum well asymmetry on the switching time of RTDs is studied. For circuit simulation purposes the RTD is modeled as a resistance in series with a parallel combination of a non-linear dependent current source and a non-linear capacitor. The current source embodies an analytic expression for the I(V) characteristics derived from basic principles. The capacitor embodies a C(V) equation derived from a self-consistent numerical two-band model simulation of the structure. It is found that the switching time is most sensitive to asymmetry on the emitter-side barrier, and that the smallest emitter barrier width structure exhibits the smallest switching time.
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Hector J. De Los Santos, Joel N. Schulman, "Influence of double-barrier quantum well asymmetry on RTD switching time", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238389; https://doi.org/10.1117/12.238389

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