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19 April 1996 Infrared photodetectors based on n-i-p-i InAs structures grown by MOCVD
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Abstract
In this paper the epitaxial growth of n-i-p-i-InAs structures for infrared photodetectors with sensitivity in region (3-5) mkm grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been represented. Experimental results: spectra absorption, responsivity of these photodetectors were demonstrated. The extension of photosensitivity and absorption spectra in long wave region up to 4 mkm have been found in comparing with common photodetectors based on bulk InAs. It was shown experimentally that n-i-p-i InAs structures are very attractive for manufacturing of high performance photodetectors in ave region (3-5) mkm on its base.
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Grachik H. Avetisyan, Vladimir B. Kulikov, Igor Dmitrievich Zalevsky, and Peter V. Bulaev "Infrared photodetectors based on n-i-p-i InAs structures grown by MOCVD", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); https://doi.org/10.1117/12.238399
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