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19 April 1996 Infrared photodetectors based on n-i-p-i InAs structures grown by MOCVD
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In this paper the epitaxial growth of n-i-p-i-InAs structures for infrared photodetectors with sensitivity in region (3-5) mkm grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been represented. Experimental results: spectra absorption, responsivity of these photodetectors were demonstrated. The extension of photosensitivity and absorption spectra in long wave region up to 4 mkm have been found in comparing with common photodetectors based on bulk InAs. It was shown experimentally that n-i-p-i InAs structures are very attractive for manufacturing of high performance photodetectors in ave region (3-5) mkm on its base.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grachik H. Avetisyan, Vladimir B. Kulikov, Igor Dmitrievich Zalevsky, and Peter V. Bulaev "Infrared photodetectors based on n-i-p-i InAs structures grown by MOCVD", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996);

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