19 April 1996 Modeling of optically switched resonant tunneling diodes
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Abstract
We simulate the current-voltage characteristics of an InGaAs/AlAs resonant-tunneling diode under dark and illuminated conditions. The current is given by a tunneling formula that has been generalized to allow for quantum mechanical effects in the contacts. The optically generated carriers effect on the current-voltage characteristic is included through the use of a rate equation. This method of determining the optical response is shown to be accurate at low intensity and useful for extracting the recombination lifetime. The existing simulator shows great promise as a design tool for optical RTDs and related devices.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Sotirelis, Dejan Jovanovic, Vijit Sabnis, Theodore S. Moise, "Modeling of optically switched resonant tunneling diodes", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238390; https://doi.org/10.1117/12.238390
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