19 April 1996 Resonant tunneling devices and circuits
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Abstract
We review results of logic and memory devices and circuits based on the negative differential resistance associated with resonant tunneling and interband tunneling effects. We have fabricated resonant interband tunneling field effect transistors on both InAs/GaSb/AlSb and InGaAs/InAlAs/InP material systems. A new exclusive-NOR device has also been demonstrated. Preliminary results of a FULL ADDER are shown. Static random access memory based on the bistability of two serially connected diodes is also achieved. We show simulations and compare our devices with other approaches and discuss important issues related to applications of resonant tunneling devices and circuits.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Shen, Saied N. Tehrani, Herb Goronkin, Gary Kramer, "Resonant tunneling devices and circuits", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238388; https://doi.org/10.1117/12.238388
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