Comparison of optical and electrical modulation bandwidths in three different 1.55-um InGaAsP buried laser structures

Roberto Paoletti; Daniele Bertone; A. Bricconi; R. Fang; L. Greborio; Gloria Magnetti; Marina Meliga

doi:10.1117/12.229958

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10 January 1996 Comparison of optical and electrical modulation bandwidths in three different 1.55-μm InGaAsP buried laser structures

Roberto Paoletti, Daniele Bertone, A. Bricconi, R. Fang, L. Greborio, Gloria Magnetti, Marina Meliga

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Proceedings Volume 2695, Functional Photonic and Fiber Devices; (1996) https://doi.org/10.1117/12.229958
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Static and dynamic characteristics of three different laser structures, by using the same active structure, have been investigated: (1) conventional BRS (Buried Ridge Structure), (2) p-n multi-junctions (MJ) blocking layers and (3) Fe-doped semi-insulating (SI) InP blocking layer. Good blocking properties in MJ and SI laser structures have been showed by measuring the DC leakage current and the linearity of the power versus current (P-I) curve, also at high operating temperature; SI laser, respect to BRS and MJ structures, has shown a large reduction in parasitic capacitance and a considerable improvement in modulation bandwidth, limited only by dynamic characteristic of active region.

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Roberto Paoletti, Daniele Bertone, A. Bricconi, R. Fang, L. Greborio, Gloria Magnetti, and Marina Meliga "Comparison of optical and electrical modulation bandwidths in three different 1.55-μm InGaAsP buried laser structures", Proc. SPIE 2695, Functional Photonic and Fiber Devices, (10 January 1996); https://doi.org/10.1117/12.229958

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