Electronic Raman scattering as a function of doping in high-Tc superconductors

Chris A. Kendziora; Ronald J. Kelley; Marshall Onellion

doi:10.1117/12.241776

10 June 1996 Electronic Raman scattering as a function of doping in high-T_c superconductors

Chris A. Kendziora, Ronald J. Kelley, Marshall Onellion

Author Affiliations +

Proceedings Volume 2696, Spectroscopic Studies of Superconductors; (1996) https://doi.org/10.1117/12.241776
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

We report the results of Raman scattering from the electronic continuum in Bi₂Sr₂CaCu₂O_8+(delta ) (Bi 2212) and Tl₂Ba₂CuO_6+(delta ) (Tl 2201) high temperature superconductors with variations in the oxygen content, (delta) . Below T_c, a peak develops in the Raman continuum associated with the opening of a superconducting gap, (Delta) (k). By selecting the polarizations of incident and scattered light, we are sensitive to possible anisotropy of the gap within the a-b plane. Near optimal doping, both materials show gap anisotropy, with 2(Delta) /k_BT_c values of 7.2 (B_1g) vs. 5.8 (A_1g) in Tl 2201 and 8.5 (B_1g) vs. 6.2 (A_1g) in Bi 2212. In contrast, both show an isotropic gap at much lower energy shifts when the carrier concentration is raised: 2(Delta) /k_BT_c equals 3.9 (5.5) for Tl 2201 (Bi 2212) with T_c equals 37 K (57 K). We compare the observed spectra with calculations based on order parameters with d-wave as well as isotropic s-wave symmetry and conclude that raising the doping level reduces the gap anisotropy to near zero.

Citation Download Citation

Chris A. Kendziora, Ronald J. Kelley, and Marshall Onellion "Electronic Raman scattering as a function of doping in high-T_c superconductors", Proc. SPIE 2696, Spectroscopic Studies of Superconductors, (10 June 1996); https://doi.org/10.1117/12.241776

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