10 June 1996 Localized states within 2 eV of Ef in YBa2Cu3O7-delta and deduced from the carrier relaxation dynamics
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Abstract
Temperature dependence of the relaxation of photoexcited (PE) carriers is used as a probe of the electronic structure of the high-temperature superconductor YBa2Cu3O7- (delta ) ((delta) approximately equals 0.1). The relaxation process is studied by 'counting' -- through measurement of the Raman scattering Stokes/anti-Stokes intensity ratio -- the phonons emitted in the process of carrier energy relaxation. The phonon 'shake-off' is found to be strongly temperature dependent, implying that the PE carrier relaxation proceeds via a temperature activated process, which can be understood in terms of hopping between localized states. The long PE carrier lifetime and temperature dependence of the relaxation process implies the existence of localized states within 2 eV of the Fermi energy in optimally doped high-Tc superconductor.
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Tomaz Mertelj, Jure Demsar, Bostjan Podobnik, Dragan Mihailovic, "Localized states within 2 eV of Ef in YBa2Cu3O7-delta and deduced from the carrier relaxation dynamics", Proc. SPIE 2696, Spectroscopic Studies of Superconductors, (10 June 1996); doi: 10.1117/12.241774; https://doi.org/10.1117/12.241774
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