10 June 1996 Optical detection of the superconducting proximity effect
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We present the first detection of a superconducting proximity effect by optical techniques. Raman scattering on n+-InAs is performed through very thin, high-quality, superconducting Nb films grown directly on the (100)InAs surface. The 6 to 10 nm thick Nb films exhibit Tcs of 2.5 to 5.5 K, as measured by electronic transport, and are flat to approximately 0.5 nm, as measured by x-ray reflectivity. As the Nb/InAs structure is cooled below the superconducting transition temperature, the magnitude of the unscreened LO phonon mode, associated with the surface charge accumulation layer in the InAs, is observed to be enhanced by more than 40%. This reversible change is observed only when the Nb is in good electrical contact with the InAs.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laura H. Greene, Laura H. Greene, A. C. Abeyta, A. C. Abeyta, Igor V. Roshchin, Igor V. Roshchin, Ian K. Robinson, Ian K. Robinson, J. F. Dorsten, J. F. Dorsten, T. A. Tanzer, T. A. Tanzer, Paul W. Bohn, Paul W. Bohn, "Optical detection of the superconducting proximity effect", Proc. SPIE 2696, Spectroscopic Studies of Superconductors, (10 June 1996); doi: 10.1117/12.241775; https://doi.org/10.1117/12.241775


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