Crystal engineering of oxide films in the fabrication of high-Tc Josephson tunnel junction

Hideomi Koinuma; Ryuta Tsuchiya; Masashi Kawasaki

doi:10.1117/12.250259

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5 July 1996 Crystal engineering of oxide films in the fabrication of high-T_c Josephson tunnel junction

Hideomi Koinuma, Ryuta Tsuchiya, Masashi Kawasaki

Proceedings Volume 2697, Oxide Superconductor Physics and Nano-Engineering II; (1996) https://doi.org/10.1117/12.250259
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

In relation to our research for the fabrication of high-T_c Josephson tunnel junction composed of YBCO(S)/oxide insulator(I)/YBCO layers, two crystal engineering issues are presented and discussed on pulsed laser processing of oxide thin films. One is the epitaxial growth of highly crystalline and orientation-controlled YBCO films and the other is the molecular layer epitaxy of perovskite and rock salt oxides films. Quantitative results are presented on the crystal quality, surface atomic layers and morphology, and electronic properties of the films and junctions. Discussion will be made on such problems as the thermodynamics versus kinetics in the film growth, identification and control of the topmost atomic layers of substrates and growing films, and electronic state of high-T_c films based on the scanning tunneling and photoelectron yield spectra.

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Hideomi Koinuma, Ryuta Tsuchiya, and Masashi Kawasaki "Crystal engineering of oxide films in the fabrication of high-T_c Josephson tunnel junction", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); https://doi.org/10.1117/12.250259

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