Novel concepts of superconductive optoelectronic devices: resonances of photoconductivity in the Cu2O gate region

Taizo Masumi; Masakatsu Isobe

doi:10.1117/12.250268

5 July 1996 Novel concepts of superconductive optoelectronic devices: resonances of photoconductivity in the Cu₂O gate region

Taizo Masumi, Masakatsu Isobe

Author Affiliations +

Proceedings Volume 2697, Oxide Superconductor Physics and Nano-Engineering II; (1996) https://doi.org/10.1117/12.250268
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

On the basis of our discoveries of anomalous photoconductivity of insulators correlated with high-Tc superconductivity, we introduce novel concepts of 'superconductive optoelectronic devices'. We have proposed that one must be able to fabricate a new type of device by combining these photoconductors for the gate region and relevant superconductors for the source and drain regions, both effective below their Tc's. We have been continuing a series of our further experimental studies seeking actual possibilities by utilizing the basic substance Cu₂O for the gate material and superconductive LBCO, LSCO, and YBCO for the source and drain materials, e.g., YBCO/Cu₂O/YBCO. Here, we report an observation of resonant and hybrid emergences of photoconductivity of Cu₂O in the gate region peculiarly in conjugation with the high-Tc superconductivity utilized in the source and drain regions in superconductive optoelectronic devices. Microwave photosignals at 35GHz guarantee a high-speed operation of the device in the n-sec region. We feed these results in a Nano-engineering back to basic physics of oxide superconductor in order to shed a new light on substantial natures of the Cu-O based high-Tc superconductivity.

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Taizo Masumi and Masakatsu Isobe "Novel concepts of superconductive optoelectronic devices: resonances of photoconductivity in the Cu₂O gate region", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); https://doi.org/10.1117/12.250268

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