5 July 1996 Novel concepts of superconductive optoelectronic devices: resonances of photoconductivity in the Cu2O gate region
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Abstract
On the basis of our discoveries of anomalous photoconductivity of insulators correlated with high-Tc superconductivity, we introduce novel concepts of 'superconductive optoelectronic devices'. We have proposed that one must be able to fabricate a new type of device by combining these photoconductors for the gate region and relevant superconductors for the source and drain regions, both effective below their Tc's. We have been continuing a series of our further experimental studies seeking actual possibilities by utilizing the basic substance Cu2O for the gate material and superconductive LBCO, LSCO, and YBCO for the source and drain materials, e.g., YBCO/Cu2O/YBCO. Here, we report an observation of resonant and hybrid emergences of photoconductivity of Cu2O in the gate region peculiarly in conjugation with the high-Tc superconductivity utilized in the source and drain regions in superconductive optoelectronic devices. Microwave photosignals at 35GHz guarantee a high-speed operation of the device in the n-sec region. We feed these results in a Nano-engineering back to basic physics of oxide superconductor in order to shed a new light on substantial natures of the Cu-O based high-Tc superconductivity.
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Taizo Masumi, Taizo Masumi, Masakatsu Isobe, Masakatsu Isobe, } "Novel concepts of superconductive optoelectronic devices: resonances of photoconductivity in the Cu2O gate region", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); doi: 10.1117/12.250268; https://doi.org/10.1117/12.250268
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