5 July 1996 Preparation and properties of two types of submicron high-Tc Josephson junctions
Author Affiliations +
Abstract
There is a variety of different types of high-Tc Josephson junctions corresponding to the short coherence length, high anisotropy and some interface problems of the oxide superconductors. Using submicron technologies nanobridges and bridges modified by ion beams in a hundred nanometer region can be fabricated. Depending on preparation parameters the ion beam influence causes implantation, sputtering or a modification of the lattice changing the superconducting properties. The case of modification is discussed in details. It is shown how parameters of the preparation process influence the physical properties of these junctions. The application of such junctions is shown for DC-SQUIDs and gradiometers including a comparison to other junction types like bicrystal or step-edge junctions. Submicron technology is useful for preparation of intrinsic stacked junctions out of thin films. In this case the single junction dimension is determined by the coupling of two copper oxide planes in an atomic scale. A mesa structure acts as a series connection of a number of single junctions corresponding to the stack height. Preparation and physical properties of these types of junction arrays are given in detail. The possible application of such new kind of devices as radiation sources or voltage standard will be discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Seidel, Frank Schmidl, Frank Machalett, Henrik Schneidewind, Andreas Pfuch, Uwe Huebner, "Preparation and properties of two types of submicron high-Tc Josephson junctions", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); doi: 10.1117/12.250256; https://doi.org/10.1117/12.250256
PROCEEDINGS
8 PAGES


SHARE
Back to Top