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10 May 1996 Electro-optic wafer beam deflector in LiTaO3
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A novel electro-optic beam deflector is reported based on ferroelectric domain inversion extending through the thickness of a Z-cut LiTaO3 wafer. The selective domain inversion is achieved by electric-field poling assisted by proton exchange, rather than proton exchange followed by rapid thermal annealing. The deflection sensitivity of the device was measured to be 5.0 mrad/KV. This is 93% of the theoretical value for this geometry, and a significant improvement over the value of 80% of theoretical previously reported for a waveguide deflector.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Li, Hsing-Chine Cheng, Matthew J. Kawas, David N. Lambeth, Tuviah E. Schlesinger, and Daniel D. Stancil "Electro-optic wafer beam deflector in LiTaO3", Proc. SPIE 2700, Nonlinear Frequency Generation and Conversion, (10 May 1996);

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