Kinetics and microstructure of laser chemical vapor deposition of titanium nitride

Kieth M. Egland; Jyotirmoy Mazumder

doi:10.1117/12.237738

8 April 1996 Kinetics and microstructure of laser chemical vapor deposition of titanium nitride

Kieth M. Egland, Jyotirmoy Mazumder

Proceedings Volume 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics; (1996) https://doi.org/10.1117/12.237738
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Titanium nitride (TiN) has been deposited by laser chemical vapor deposition (LCVD) using a CO₂ laser and N₂, H₂, and TiCl₄ reactant gases. Multi-wavelength pyrometry has been used to determine deposition temperatures. Growth rates based on film height are typically 3000 - 10000 angstroms/second. Film profiles are Gaussian with a coarsened polyhedral morphology that show a marked size dependence on deposition temperature. Auger analyses reveal a substoichiometric composition (N/Ti < 1), regardless of reactant gas composition or deposition temperature. Previous work on TiN LCVD suggested a two-regime mechanism, depending on gas composition. By eliminating temperature variation, this work suggests a one-mechanism field over the whole range of gas compositions.

Citation Download Citation

Kieth M. Egland and Jyotirmoy Mazumder "Kinetics and microstructure of laser chemical vapor deposition of titanium nitride", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); https://doi.org/10.1117/12.237738

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